Improved photoelectrochemical performance of bismuth vanadate by partial O/F-substitution
نویسندگان
چکیده
منابع مشابه
Factors affecting bismuth vanadate photoelectrochemical performance
Beckman Institute and Division of Chemist Institute of Technology, Pasadena, Californ edu † Electronic supplementary informatio photoanode performances; experimental FTO-glass photoanodes; statistics of aspect-ratio-normalised diameter distrib FTO-glass photoanodes; effect of iodi solubility of metal salts in the spin-coat of electrodeposited BiVO4 without sulte spectrum; SEM images of FTO on ...
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n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks ...
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Bismuth vanadate (BiVO4) has attracted increasing attention as a photoanode for photoelectrochemical (PEC) water splitting. It has a band gap in the visible light range (2.4−2.5 eV) and a valence band position suitable for driving water oxidation under illumination. While a number of methods have been used to make BiVO4 photoanodes, scalable thin film deposition has remained relatively underexp...
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ژورنال
عنوان ژورنال: Solid State Sciences
سال: 2017
ISSN: 1293-2558
DOI: 10.1016/j.solidstatesciences.2016.11.004